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Virtual Presentation During VLSI 2020 Details Transistors' Performance And Power-Use Advantages Versus FinFET Devices
By increasing the number of stacked-channels, we increase the effective width of the device for a given layout footprint," he explained. "Increasing the effective width induces higher drive current. This is why the DC performance of our devices is better than leading-edge devices.
We added specific modules for GAA structures on this FinFET route and we showed that for the same surface occupation we can propose an alternative to FinFET technology due to a gate-all-around configuration," he said. "In fact, GAA structures offer many advantages over FinFET, such as better gate control and higher DC performance, thanks to higher effective channel width. In addition, the wide range of variable nanosheet widths allows more design flexibility, which is not possible for FinFET because of its discrete number of fins.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.