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Gallium Nitride Seen as Highly Efficient Replacement for Silicon in Wide Range of Consumer and Industrial Uses. Two complementary research papers from CEA-Leti confirmed that the institute's approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems.
CEA-Leti will unveil its latest scientific results in 3D sequential integration for neural networks, 3D RRAM for in-memory computing and GaN-on-Si for power electronics at IEDM 2020, Dec. 12-16. The event will be held virtually because of the coronavirus pandemic.Institute scientists are lead authors on four papers and contributing authors on five more that will be presented during the conference.
CEA-Leti's best silicon-based GaN power components have now been showcased to reflect their excellence: a double face cooling module with performance characteristics exceeding the state of the art.
GRENOBLE, France – June 11, 2020 – CEA-Leti today announced its researchers have broken the throughput world record of 5.1 Gbps in visible light communications (VLC) using a single GaN blue micro- light-emitting diode (LED). Their data transmission rate of 7.7 Gbps achieved with a 10 µm microLED marks another step toward commercialization and widespread use of LiFi communication.
Cea-Leti and UnitySC today announced a four-year extension of their collaboration to further advance metrology-inspection capabilities per tool, while reducing the tools’ footprint and cost of ownership.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.