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A CEA-Leti tutorial presented at IEDM 2022 highlighted promising advantages that resistive random-access memory (RRAM) technologies hold for implementing novel neuromorphic/in-memory computing systems for massively parallel, low-power and low-latency computation.
CEA-Leti, Université Grenoble Alpes, CNRS Institut Néel, and CEA-Irig shared a new three-step characterization chain for linear silicon quantum dot (QD) arrays fabricated on fully depleted silicon-on-insulator (FDSOI) material.
CEA, in collaboration with CNRS Néel, a leading team in SI-based quantum computing, presented two papers on that topic at IEDM 2021, including an invited paper that identifies the material and integration challenges facing large-scale Si quantum computing. The second paper presents a novel Si quantum device integration that reduces by half the effective gate pitch and provides full controllability in 1D FDSOI quantum dot (QD) arrays.
Targeted Applications Include High-Dimensional Distributed Environmental Monitoring, Implantable Medical-Diagnostic Microchips, Wearable Electronics & Human/Computer Interfaces
Papers at IEDM 2020 Explore Ways to Leverage 3D Technology's Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission. CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory computing (IMC), and their applications for Edge-AI and neural networks. The projects were designed to look at different ways to leverage 3D's strengths in lowering device energy consumption as well as energy lost during data transfer.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.