You are here : Home > CEA-Leti @IEDM San Francisco 2023

CEA-Leti @IEDM San Francisco 2023

From 12/9/2023 to 12/13/2023
Hilton San Francisco Union Square

​​​​​Join us during the 69th edition of International Electron Devices Meeting!

CEA-Leti Will Present Gains in Ultimate 3D, RF & Power, and

Quantum & Neuromorphic Computing with Emerging Devices​

IEEE International Electron Devices Meeting (IEDM) is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. ​

The institute will present nine papers during the conference this year. Two presentations will highlight a breakthrough in 3D sequential integration and results pushing GaN/Si HEMT closer to GaN/SiC performance at 28 GHz:

“3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK iBEOL Featuring RO and HDR Pixel”, reports the world-first 3D sequential integration of CMOS over CMOS with advanced metal line levels, which brings 3DSI with intermediate BEOL closer to commercialization.

"6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts" reports development of CMOS compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon substrate that brings GaN/Si high electron mobility transistors (HEMT) closer to GaN/SiC performance at 28 GHz in power density. It also highlights that SiN/AlN/GaN on silicon metal-insulated semiconductor (MIS-HEMT) is a potential candidate for high power Ka-band power amplifiers. .

​Be part of the discussion and find below CEA-Leti’s interventions at IEDM 2023! 

​​3D Sequential Stacking
​Session 19.5:  Tuesday, Dec. 12
@ 4:00 pm (Grand Ballroom A)
​Collaborative research paper between CEA-Leti and Soitec
​Ultimate Layer Stacking Technology for High Density Sequential 3D Integration​​​
​Session 29.3:  Wednesday, Dec. 13
@ 9:55 am (Grand Ballroom B)
​Tadeu Mota Frutuoso
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
​​​Radio Frequency
Session 34.2:  Wednesday, Dec. 13 @ 9:30 am (Continental 7-9)
​Xavier Barros
​A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application
Session 34.3:  Wednesday, Dec. 13 @ 9:55 am (Continental 7-9)
​Quentin Berlingard
​RF performance enhancement of 28nm FD-SOI transistors down to cryogenic temperature using back biasing
​Session 38.3:  Wednesday, Dec. 13 @ 2:25 pm (Continental 4)
​Erwan Morvan
​6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts
​​Emerging Device and Compute Technology​ (EDT)
Session 22.3:  Tuesday, Dec. 12
@ 3:10 (Continental 5)
​Kamal Danouchi
​Designing Networks of Resistively-Coupled Stochastic Magnetic Tunnel Junctions for Energy-Based Optimum Search  
​​​Neuromoprhic computing
 papers ​Session 23:3:  Tuesday, Dec. 12
@ 3:10 (Continental 6)
​Michele Martemucci (CEA-List)
​Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge 
​Session 12:3:  Tuesday, Dec. 12
@ 9:55 am (Continental 1-3)
​Work in collaboration between Damien Querlioz and Elisa Vianello (CEA-Leti)
​Bayesian In-Memory Computing with Resistive Memories
​Quantum Technology

​Session 22:6:  Tuesday, Dec. 12
@ 4:25 pm (Continental 5)
​H. Niebojewski and B. Bertrand 
​Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices


December 10th at 5:30pm, meet our experts during the Leti Devices Workshop and discover highly innovative technologies towards efficiency & sustainability.
📍 Nikko Hotel, 222 Mason Street, third floor​

Practical information

​Event's website:​ 

Top page


RSS feed