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CEA-Leti's best silicon-based GaN power components have now been showcased to reflect their excellence: a double face cooling module with performance characteristics exceeding the state of the art.
GRENOBLE, France – June 11, 2020 – CEA-Leti today announced its researchers have broken the throughput world record of 5.1 Gbps in visible light communications (VLC) using a single GaN blue micro- light-emitting diode (LED). Their data transmission rate of 7.7 Gbps achieved with a 10 µm microLED marks another step toward commercialization and widespread use of LiFi communication.
Cea-Leti and UnitySC today announced a four-year extension of their collaboration to further advance metrology-inspection capabilities per tool, while reducing the tools’ footprint and cost of ownership.
Cooperation to develop and industrialize advanced power GaN-on-Si diode and transistor architectures
Exagan, a spinoff of Soitec and Leti, a CEA Tech institute, appears to have a bright future on the power electronics market. Named 2017 startup of the year by Ernst & Young, Exagan is scaling up a technology that could speed up the widespread adoption of GaN components.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.